general description features the HT4407/l uses advanced tr ench technology to vds (v) = -30v provide excellent rds(on), and ultra-low low gate id = -12 a (vgs = -20v) charge with a 25v gate rating. this device is suitable r ds(on) < 13m ? (vgs = -20v) for use as a load switch or in pwm r ds(on) < 14m ? (vgs = -10v) applications.o4407 and HT4407l are elec trically r ds(on) < 38m ? (vgs = -5v) identical. -rohs compliant -HT4407l is halogen free 100% uis tested 100% rg tested absolute maximum ratings ta=25c unless otherwise noted parameter symbol maximum units drain-source voltage v ds -30 v gate-source voltage vgs + 25 v continuous drain current af ta=25c id -12 a ta=70c -10 pulsed drain current b idm -60 avalanche current g iar -30 a repetitive avalanche energy l=0.3mh g ear 135 mj power dissipation a ta=25c pd 3.1 w ta=70c 2 junction and storage temperature r ange tj, tstg -50 to 150 c HT4407 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
thermal characteristics parameter symbol typ max units maximum junction-to-ambient a t 10s r ja 32 40 c/w maximum junction-to-ambient a steady-state 60 75 c/w maximum junction-to-lead c steady-state r jl 17 24 c/w electrical characteristics (t j =25c unless otherwise noted) symbol parameter conditions min typ max units static parameters bv dss id=-250a, vgs=0v -30 v i dss zero gate voltage drain current vds=-30v, vgs=0v -1 a t j =55c -5 igss gate-body leakage current vds=0v, vgs=25v + 100 na vgs(th) gate threshold voltage vds=vgs id=-250a -1.7 -2.5 -3 v id(on) on state drain current vgs=-10v, vds=-5v 60 a rds(on) static drain-source on-resistance vgs=-10v, id=-10a 11 14 m ? tj=125c 15 19 vgs=-20v, id=-10a 10 13 m ? vgs=-5v, id=-10a 27 38 s g fs forward transconductance vds=-5v, id=-10a 26 s vsd diode forward voltage is=-1a,vgs=0v -0.72 -1 v is -4.2 a dynamic parameters ciss input apacitance vgs=0v, vds=-15v, f=1mhz 2076 2500 pf coss output capacitance 503 pf crss reverse transfer capacitance 302 423 pf rg gate resistance vgs=0v, vds=0v, f=1mhz 1 2 3 ? switching parameters qg total gate charge vgs=-10v,vds=-15v, id=-12a 30 37.2 45 nc qgs gate source charge 7 nc qgd gate drain charge 10.4 nc td(on) turn-on delaytime vgs=-10v,vds=-15v, rl=1.25 ? , rgen=3 ? 12.4 ns tr turn-on rise time 8.2 ns td(off) turn-off delaytime 25.6 ns tf turn-off fall time 12 ns trr body diode everse recovery time if=-12a, di/dt=100a/s 33 40 ns qrr body diode reverse recovery charge if=-12a, di/dt=100a/s 23 nc HT4407 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the value in any given applicati on depends on the user's s pecific board design. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a=25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. g. ear and iar ratings are based on low frequency and duty cycles such that tj(start)=25c for each pulse. typical electrical and thermal characteristics HT4407 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical electrical and thermal characteristics HT4407 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
HT4407 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
HT4407 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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